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CZT3150 SURFACE MOUNT NPN SILICON POWER TRANSISTOR
Central
TM
Semiconductor Corp.
DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT3150 type is a NPN Silicon Power Transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high current, high gain, fast switching applications. MARKING CODE: FULL PART NUMBER
SOT-223 CASE
MAXIMUM RATINGS: (TA=25C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance VCBO VCEO VEBO IC IB PD TJ,Tstg JA 50 25 7.0 5.0 1.0 2.0 -65 to +150 62.5 UNITS V V V A A W C C/W
ELECTRICAL CHARACTERISTICS: (TA=25C unless otherwise noted) SYMBOL ICBO IEBO BVCEO VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) hFE hFE hFE fT Cob TEST CONDITIONS VCB=50V VEB=7.0V IC=10mA IC=3.0A, IB=150mA IC=4.0A, IB=200mA IC=3.0A, IB=150mA IC=4.0A, IB=200mA VCE=2.0V, IC=500mA VCE=2.0V, IC=2.0A VCE=2.0V, IC=5.0A VCE=6.0V, IC=50mA, f=200MHz VCB=10V, IE=0, f=1.0MHz 250 150 50 150 50 MHz pF 25 0.35 0.50 1.10 1.40 550 MIN TYP MAX 1.0 1.0 UNITS A A V V V V V
R4 (17-June 2004)
Central
TM
CZT3150 SURFACE MOUNT NPN SILICON POWER TRANSISTOR
Semiconductor Corp.
SOT-223 CASE - MECHANICAL OUTLINE
LEAD CODE: 1) BASE 2) COLLECTOR 3) EMITTER 4) COLLECTOR MARKING CODE: FULL PART NUMBER
SYMBOL A B C D E F G H I J K L M
DIMENSIONS INCHES MILLIMETERS MIN MAX MIN MAX 0 10 0 10 0.059 0.071 1.50 1.80 0.018 --0.45 --0.000 0.004 0.00 0.10 15 15 0.009 0.014 0.23 0.35 0.248 0.264 6.30 6.70 0.114 0.122 2.90 3.10 0.130 0.146 3.30 3.70 0.264 0.287 6.70 7.30 0.024 0.033 0.60 0.85 0.091 2.30 0.181 4.60 SOT-223 (REV: R3)
R4 (17-June 2004)

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